Mechanoluminescence (ML) has garnered considerable attention in widespread applications, including visualized stress detection, electronic signatures, and electronic skin. However, its high stress-threshold and limited emission efficiency fail to satisfy the growing applications. To address these challenges, we propose constructing ZnS:Mn/ZnO heterostructure with type II energy band alignment, aiming to activate the abundant electrons in the valence band for ML emission and introduce additional piezoelectric field as well as built-in electric field. The ZnS: Mn/ZnO heterostructure array chips were fabricated by standard semiconductor techniques, forming regular heterostructures and emission centers in square array. Each emission square functions as a pixel for mapping force and recording dynamic forces. As anticipated, the heterostructure array exhibits a record-low threshold of 0.05 N and a 4-fold increase in …