CsPbBr
3
shows great potential in laser applications due to its superior
optoelectronic characteristics. The growth of CsPbBr
3
wire arrays with
well-controlled sizes and locations is beneficial for cost-effective and largely
scalable integration into on-chip devices. Besides, dynamic modulation of
perovskite lasers is vital for practical applications. Here, monocrystalline
CsPbBr
3
microwire (MW) arrays with tunable widths, lengths, and locations
are successfully synthesized. These MWs could serve as high-quality
whispering-gallery-mode lasers with high quality factors (
>
1500), low
thresholds (
<
3
µ
J cm
−
2
), and long stability (
>
2 h). An increase of the width
results in an increase of the laser quality and the resonant mode number.
The dynamic modulation of lasing modes is achieved by a piezoelectric
polarization-induced refractive index change. Single-mode lasing can be
obtained by applying strain to CsPbBr
3
MWs with widths between 2.3 and
3.5
µ
m, and the mode positions can be modulated dynamically up to
≈
9 nm
by changing the applied strain. Piezoelectric-induced dynamic modulation
of single-mode lasing is convenient and repeatable. This method opens
new horizons in understanding and utilizing the piezoelectric properties of
lead halide perovskites in lasing applications and shows potential in other
applications, such as on-chip strain sensing
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