ABSTRACT Mechanoluminescent (ML) smart materials are
expected to be used in stress sensors, new displays, and ad
vanced flexible optoelectronic devices, because of their unique
mechanical-to-light energy conversion properties. However,
the narrow-range ML emission characteristics of single ma
terials limit their application scope. In this work, we report on=
the broadband multimodal emission in Sb-doped CaZnOS
layered semiconductors. A series of CaZnOS layer-structured
powders with different Sb
3+
doping concentrations were syn
thesised using a high-temperature solid-phase method. The
CaZnOS:Sb
3+
phosphor achieved a wide range of ML spectra
(400–900 nm), adjustable photoluminescence with double lu
minescent peaks located at 465 and 620 nm, and the X-ray
induced luminescence characteristics were systematically stu
died. We have also achieved ultra-broad warm white light ML
emission of Sb
3+
and Bi
3+
co-doped samples. Therefore, it can
be expected that these ML phosphors will be used in smart
lighting, displays, visible stress sensors, and X-ray imaging
and detections.
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