CaZnOS-based semiconductors are the only series of material system discovered that can simultaneously realize a large number of dopant elements to  directly fulfill the highly efficient full-spectrum functionality from ultraviolet to  near-infrared under the same force/pressure. Nevertheless, owing to the high  agglomeration of the high temperature solid phase manufacturing process,  which is unable to control the crystal morphology, the application progress is  limited. Here, the authors report first that CaZnOS-based fine monodisperse  semiconductor crystals with various doping ions are successfully synthesized  by a molten salt shielded method in an air environment. This method does not  require inert gas ventilation, and therefore can greatly reduce the synthesis cost  and more importantly improve the fine control of the crystal morphology, along  with the crystals’ dispersibility and stability. These doped semiconductors can  not only realize different colors of mechanical-to-optical energy conversion,  but also can achieve multicolor luminescence under low-dose X-ray irradiation,  moreover their intensities are comparable to the commercial NaI:Tl. They can  pave the way to the new fields of advanced optoelectronic applications, such as  piezophotonic systems, mechanical energy conversion and harvesting devices, intelligent sensors, and artificial skin as well as X-ray applications.